Abstract
Mechanisms of radiation-induced flow in amorphous solids have been investigated using molecular dynamics computer simulations. It is shown for a model glass system, CuTi, that the radiation-induced flow is independent of recoil energy between 100 eV and 10 keV when compared on the basis of defect production and that there is a threshold energy for flow of [Formula presented]. Injection of interstitial- and vacancylike defects induces the same amount of flow as the recoil events, indicating that point-defect-like entities mediate the flow process, even at 10 K. Comparisons of these results with experiments and thermal spike models are made.
| Original language | English |
|---|---|
| Pages (from-to) | 4 |
| Number of pages | 1 |
| Journal | Physical Review Letters |
| Volume | 90 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2003 |
| Externally published | Yes |
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