Memristor-like behavior and negative resistance in a superconductor/insulator/ferromagnet device with a pinholes-governed interface

G. Bauer; M. Ozeri; M. S. Anwar; H. Matsuki; N. Stelmashenko; S. Yochelis; M. Cuoco; J. W.A. Robinson; Y. Paltiel; O. Millo

doi:10.1088/1361-6668/ace28a

Memristor-like behavior and negative resistance in a superconductor/insulator/ferromagnet device with a pinholes-governed interface

G. Bauer, M. Ozeri, M. S. Anwar, H. Matsuki, N. Stelmashenko, S. Yochelis, M. Cuoco, J. W.A. Robinson^*, Y. Paltiel^*, O. Millo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the voltage-current characteristics of a superconductor-insulator-ferromagnet heterostructure, where the insulating layer contains pinhole-defects. The superconducting layer exhibits multiple voltage jumps that are hysteretic with the current sweep direction. This characteristic of the resistive state is due to pinholes that induce local, distinct, coupling regions between the superconducting and ferromagnetic layers which may generate phase-slip lines or vortex channeling. These findings point to a magnetically driven design of a superconductor memristor. Concomitantly, the junctions display both absolute and differential negative resistances below the superconducting critical temperature and current. This anomalous behavior is analyzed using a circuit approach and is attributed to current passing through pinholes within the insulating layer. These two unique effects, which stem from the special topology of the pinholes-governed interface can be applied in superconductor-based switches and memory devices.

Original language	American English
Article number	085015
Journal	Superconductor Science and Technology
Volume	36
Issue number	8
DOIs	https://doi.org/10.1088/1361-6668/ace28a
State	Published - Aug 2023

Bibliographical note

Funding Information:
We thank Hen Alpern and Nir Sukenik for helpful discussions and Ofek Vardi for the digital illustration. The research was supported in parts by the Grants from the Academia Sinica—Hebrew University Research Program (O M and Y P). O M thanks support from the Israel Science Foundation Grant Nos. 576/21 and the Harry de Jur Chair in Applied Science. J W A R and M S A acknowledges funding from the EPSRC through the EPSRC-JSPS Core-to-Core Grant (No. EP/P026311/1). M O thanks a scholarship from the Hebrew University Center for Nanoscience and Nanotechnology.

Publisher Copyright:
© 2023 The Author(s). Published by IOP Publishing Ltd.

Keywords

negative resistance
proximity effect
superconductivity

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10.1088/1361-6668/ace28a

Cite this

Bauer, G., Ozeri, M., Anwar, M. S., Matsuki, H., Stelmashenko, N., Yochelis, S., Cuoco, M., Robinson, J. W. A., Paltiel, Y., & Millo, O. (2023). Memristor-like behavior and negative resistance in a superconductor/insulator/ferromagnet device with a pinholes-governed interface. Superconductor Science and Technology, 36(8), Article 085015. https://doi.org/10.1088/1361-6668/ace28a

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abstract = "We investigate the voltage-current characteristics of a superconductor-insulator-ferromagnet heterostructure, where the insulating layer contains pinhole-defects. The superconducting layer exhibits multiple voltage jumps that are hysteretic with the current sweep direction. This characteristic of the resistive state is due to pinholes that induce local, distinct, coupling regions between the superconducting and ferromagnetic layers which may generate phase-slip lines or vortex channeling. These findings point to a magnetically driven design of a superconductor memristor. Concomitantly, the junctions display both absolute and differential negative resistances below the superconducting critical temperature and current. This anomalous behavior is analyzed using a circuit approach and is attributed to current passing through pinholes within the insulating layer. These two unique effects, which stem from the special topology of the pinholes-governed interface can be applied in superconductor-based switches and memory devices.",

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note = "Funding Information: We thank Hen Alpern and Nir Sukenik for helpful discussions and Ofek Vardi for the digital illustration. The research was supported in parts by the Grants from the Academia Sinica—Hebrew University Research Program (O M and Y P). O M thanks support from the Israel Science Foundation Grant Nos. 576/21 and the Harry de Jur Chair in Applied Science. J W A R and M S A acknowledges funding from the EPSRC through the EPSRC-JSPS Core-to-Core Grant (No. EP/P026311/1). M O thanks a scholarship from the Hebrew University Center for Nanoscience and Nanotechnology. Publisher Copyright: {\textcopyright} 2023 The Author(s). Published by IOP Publishing Ltd.",

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AU - Ozeri, M.

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AU - Matsuki, H.

AU - Stelmashenko, N.

AU - Yochelis, S.

AU - Cuoco, M.

AU - Robinson, J. W.A.

AU - Paltiel, Y.

AU - Millo, O.

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PY - 2023/8

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N2 - We investigate the voltage-current characteristics of a superconductor-insulator-ferromagnet heterostructure, where the insulating layer contains pinhole-defects. The superconducting layer exhibits multiple voltage jumps that are hysteretic with the current sweep direction. This characteristic of the resistive state is due to pinholes that induce local, distinct, coupling regions between the superconducting and ferromagnetic layers which may generate phase-slip lines or vortex channeling. These findings point to a magnetically driven design of a superconductor memristor. Concomitantly, the junctions display both absolute and differential negative resistances below the superconducting critical temperature and current. This anomalous behavior is analyzed using a circuit approach and is attributed to current passing through pinholes within the insulating layer. These two unique effects, which stem from the special topology of the pinholes-governed interface can be applied in superconductor-based switches and memory devices.

AB - We investigate the voltage-current characteristics of a superconductor-insulator-ferromagnet heterostructure, where the insulating layer contains pinhole-defects. The superconducting layer exhibits multiple voltage jumps that are hysteretic with the current sweep direction. This characteristic of the resistive state is due to pinholes that induce local, distinct, coupling regions between the superconducting and ferromagnetic layers which may generate phase-slip lines or vortex channeling. These findings point to a magnetically driven design of a superconductor memristor. Concomitantly, the junctions display both absolute and differential negative resistances below the superconducting critical temperature and current. This anomalous behavior is analyzed using a circuit approach and is attributed to current passing through pinholes within the insulating layer. These two unique effects, which stem from the special topology of the pinholes-governed interface can be applied in superconductor-based switches and memory devices.

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Memristor-like behavior and negative resistance in a superconductor/insulator/ferromagnet device with a pinholes-governed interface

Abstract

Bibliographical note

Keywords

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