Memristor switching and integration in ensembles of silicon nanocrystallites

Isaac Balberg*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We suggest a memristor device that is based on ensembles of Si nanocrystallites that are embedded in an SO2 matrix, for which we show that its operation is well accounted for by the theory of space charge limited currents. This operation consists of a memristive film that exhibits electronic charge integration properties as well as a potential to provide a quantum confinement controlled spiking behavior. As such, the present system is probably the closest available two-terminal electronic film analog that may imitate the neuron's function. This system can be considered then, not only as "purely electronic" and "bio-realistic" but also as having the great advantage of being compatible with the silicon microelectronic technology. Corresponding devices have the potential to become practical by their downscaling, on the one hand, and by providing a controllable spiking mechanism on the same device, on the other hand.

Original languageEnglish
Article number045205
JournalAIP Advances
Volume10
Issue number4
DOIs
StatePublished - 1 Apr 2020

Bibliographical note

Publisher Copyright:
© 2020 Author(s).

Fingerprint

Dive into the research topics of 'Memristor switching and integration in ensembles of silicon nanocrystallites'. Together they form a unique fingerprint.

Cite this