Metal to insulator transition on the N=0 landau level in graphene

Liyuan Zhang*, Yan Zhang, M. Khodas, T. Valla, I. A. Zaliznyak

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T dependence is observed for T 50K, which is either metallic, or insulating, depending on the filling factor ν. The metal-insulator transition (MIT) occurs at |νc|∼0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx>12RK. The critical resistivity (Rxx per square) is ρxx(νc) 12RK and is correlated with the appearance of zero plateau in Hall conductivity σxy(ν) and peaks in σxx(ν). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition.

Original languageAmerican English
Article number046804
JournalPhysical Review Letters
Issue number4
StatePublished - 22 Jul 2010
Externally publishedYes


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