Metal to insulator transition on the N=0 landau level in graphene

Liyuan Zhang; Yan Zhang; M. Khodas; T. Valla; I. A. Zaliznyak

doi:10.1103/PhysRevLett.105.046804

Metal to insulator transition on the N=0 landau level in graphene

Liyuan Zhang^*, Yan Zhang, M. Khodas, T. Valla, I. A. Zaliznyak

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T dependence is observed for T 50K, which is either metallic, or insulating, depending on the filling factor ν. The metal-insulator transition (MIT) occurs at |νc|∼0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx>12RK. The critical resistivity (Rxx per square) is ρxx(νc) 12RK and is correlated with the appearance of zero plateau in Hall conductivity σxy(ν) and peaks in σxx(ν). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition.

Original language	American English
Article number	046804
Journal	Physical Review Letters
Volume	105
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevLett.105.046804
State	Published - 22 Jul 2010
Externally published	Yes

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title = "Metal to insulator transition on the N=0 landau level in graphene",

abstract = "The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T dependence is observed for T 50K, which is either metallic, or insulating, depending on the filling factor ν. The metal-insulator transition (MIT) occurs at |νc|∼0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx>12RK. The critical resistivity (Rxx per square) is ρxx(νc) 12RK and is correlated with the appearance of zero plateau in Hall conductivity σxy(ν) and peaks in σxx(ν). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition.",

author = "Liyuan Zhang and Yan Zhang and M. Khodas and T. Valla and Zaliznyak, {I. A.}",

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T1 - Metal to insulator transition on the N=0 landau level in graphene

AU - Zhang, Liyuan

AU - Zhang, Yan

AU - Khodas, M.

AU - Valla, T.

AU - Zaliznyak, I. A.

PY - 2010/7/22

Y1 - 2010/7/22

N2 - The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T dependence is observed for T 50K, which is either metallic, or insulating, depending on the filling factor ν. The metal-insulator transition (MIT) occurs at |νc|∼0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx>12RK. The critical resistivity (Rxx per square) is ρxx(νc) 12RK and is correlated with the appearance of zero plateau in Hall conductivity σxy(ν) and peaks in σxx(ν). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition.

AB - The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T dependence is observed for T 50K, which is either metallic, or insulating, depending on the filling factor ν. The metal-insulator transition (MIT) occurs at |νc|∼0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx>12RK. The critical resistivity (Rxx per square) is ρxx(νc) 12RK and is correlated with the appearance of zero plateau in Hall conductivity σxy(ν) and peaks in σxx(ν). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition.

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Metal to insulator transition on the N=0 landau level in graphene

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