Metalorganic vapor phase epitaxy InSb p+nn+ photodiodes with low dark current

Y. Paltiel; A. Sher; A. Raizman; S. Shusterman; M. Katz; A. Zemel; Z. Calahorra; M. Yassen

doi:10.1063/1.1767602

Metalorganic vapor phase epitaxy InSb p⁺nn⁺ photodiodes with low dark current

Y. Paltiel^*, A. Sher, A. Raizman, S. Shusterman, M. Katz, A. Zemel, Z. Calahorra, M. Yassen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The fabrication of photodiodes of InSb on epilayers was discussed. The metalorganic vapor phase epitaxy (MOVPE) technique was used for the purpose. Zero-bias-resistance area products as high as 1×10 ⁶ωcm² and dark reverse current density as low as 1×10^-7 A/cm² at -0.1 V bias were measured. It was found that MOVPE is the best technique for the fabrication of state-of-the-art focal plane InSb detector arrays.

Original language	English
Pages (from-to)	5419-5421
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	26
DOIs	https://doi.org/10.1063/1.1767602
State	Published - 28 Jun 2004
Externally published	Yes

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title = "Metalorganic vapor phase epitaxy InSb p+nn+ photodiodes with low dark current",

abstract = "The fabrication of photodiodes of InSb on epilayers was discussed. The metalorganic vapor phase epitaxy (MOVPE) technique was used for the purpose. Zero-bias-resistance area products as high as 1×10 6ωcm2 and dark reverse current density as low as 1×10-7 A/cm2 at -0.1 V bias were measured. It was found that MOVPE is the best technique for the fabrication of state-of-the-art focal plane InSb detector arrays.",

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AU - Paltiel, Y.

AU - Sher, A.

AU - Raizman, A.

AU - Shusterman, S.

AU - Katz, M.

AU - Zemel, A.

AU - Calahorra, Z.

AU - Yassen, M.

PY - 2004/6/28

Y1 - 2004/6/28

N2 - The fabrication of photodiodes of InSb on epilayers was discussed. The metalorganic vapor phase epitaxy (MOVPE) technique was used for the purpose. Zero-bias-resistance area products as high as 1×10 6ωcm2 and dark reverse current density as low as 1×10-7 A/cm2 at -0.1 V bias were measured. It was found that MOVPE is the best technique for the fabrication of state-of-the-art focal plane InSb detector arrays.

AB - The fabrication of photodiodes of InSb on epilayers was discussed. The metalorganic vapor phase epitaxy (MOVPE) technique was used for the purpose. Zero-bias-resistance area products as high as 1×10 6ωcm2 and dark reverse current density as low as 1×10-7 A/cm2 at -0.1 V bias were measured. It was found that MOVPE is the best technique for the fabrication of state-of-the-art focal plane InSb detector arrays.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Metalorganic vapor phase epitaxy InSb p⁺nn⁺ photodiodes with low dark current

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