Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Maksim Ermolaev; Sergey Suchalkin; Gregory Belenky; Gela Kipshidze; Boris Laikhtman; Seongphill Moon; Mykhaylo Ozerov; Dmitry Smirnov; Stefan P. Svensson; Wendy L. Sarney

doi:10.1063/1.5051767

Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Maksim Ermolaev, Sergey Suchalkin^*, Gregory Belenky, Gela Kipshidze, Boris Laikhtman, Seongphill Moon, Mykhaylo Ozerov, Dmitry Smirnov, Stefan P. Svensson, Wendy L. Sarney

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Metamorphic strain compensated InSb/InAsSb_0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb_0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.

Original language	English
Article number	213104
Journal	Applied Physics Letters
Volume	113
Issue number	21
DOIs	https://doi.org/10.1063/1.5051767
State	Published - 19 Nov 2018

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abstract = "Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.",

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AU - Ermolaev, Maksim

AU - Suchalkin, Sergey

AU - Belenky, Gregory

AU - Kipshidze, Gela

AU - Laikhtman, Boris

AU - Moon, Seongphill

AU - Ozerov, Mykhaylo

AU - Smirnov, Dmitry

AU - Svensson, Stefan P.

AU - Sarney, Wendy L.

PY - 2018/11/19

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Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

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