Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Maksim Ermolaev; Sergey Suchalkin; Gregory Belenky; Gela Kipshidze; Boris Laikhtman; Seongphill Moon; Mykhaylo Ozerov; Dmitry Smirnov; Stefan P. Svensson; Wendy L. Sarney

doi:10.1063/1.5051767

Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Maksim Ermolaev
, Sergey Suchalkin^*
, Gregory Belenky
, Gela Kipshidze
, Boris Laikhtman
, Seongphill Moon
, Mykhaylo Ozerov
, Dmitry Smirnov
, Stefan P. Svensson
, Wendy L. Sarney

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Metamorphic strain compensated InSb/InAsSb_0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb_0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.

Original language	English
Article number	213104
Journal	Applied Physics Letters
Volume	113
Issue number	21
DOIs	https://doi.org/10.1063/1.5051767
State	Published - 19 Nov 2018

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

Access to Document

10.1063/1.5051767

Cite this

@article{0a07780e71ee43b38ebc61b271bfcff9,

title = "Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers",

abstract = "Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.",

author = "Maksim Ermolaev and Sergey Suchalkin and Gregory Belenky and Gela Kipshidze and Boris Laikhtman and Seongphill Moon and Mykhaylo Ozerov and Dmitry Smirnov and Svensson, \{Stefan P.\} and Sarney, \{Wendy L.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = nov,

day = "19",

doi = "10.1063/1.5051767",

language = "אנגלית",

volume = "113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

AU - Ermolaev, Maksim

AU - Suchalkin, Sergey

AU - Belenky, Gregory

AU - Kipshidze, Gela

AU - Laikhtman, Boris

AU - Moon, Seongphill

AU - Ozerov, Mykhaylo

AU - Smirnov, Dmitry

AU - Svensson, Stefan P.

AU - Sarney, Wendy L.

PY - 2018/11/19

Y1 - 2018/11/19

N2 - Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.

AB - Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.

UR - https://www.scopus.com/pages/publications/85056889938

U2 - 10.1063/1.5051767

DO - 10.1063/1.5051767

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85056889938

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213104

ER -

Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this