Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)

L. E. Eng; A. Sa'ar; T. R. Chen; I. Gravé; N. Kuze; A. Yariv

doi:10.1063/1.104775

Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)

L. E. Eng^*, A. Sa'ar, T. R. Chen, I. Gravé, N. Kuze, A. Yariv

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The operation of ultralow threshold current GaAs and InGaAs quantum well lasers at cryogenic temperatures has been studied. In particular the threshold current I_th and lasing wavelength of GaAs and strained InGaAs lasers have been measured as a function of temperature from 300 down to 5 K. I _th can in both lasers be characterized by a linear function of temperature up to 200 K, with a significantly (2.5×) larger dI _th/dT for the GaAs laser. We measured a minimum threshold current of 120 μA for the GaAs laser and 165 μA for the InGaAs laser at 5 K. We derive a simple expression for the transparency carrier density as a function of temperature and effective masses to explain our results.

Original language	English
Pages (from-to)	2752-2754
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	24
DOIs	https://doi.org/10.1063/1.104775
State	Published - 1991
Externally published	Yes

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title = "Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)",

abstract = "The operation of ultralow threshold current GaAs and InGaAs quantum well lasers at cryogenic temperatures has been studied. In particular the threshold current Ith and lasing wavelength of GaAs and strained InGaAs lasers have been measured as a function of temperature from 300 down to 5 K. I th can in both lasers be characterized by a linear function of temperature up to 200 K, with a significantly (2.5×) larger dI th/dT for the GaAs laser. We measured a minimum threshold current of 120 μA for the GaAs laser and 165 μA for the InGaAs laser at 5 K. We derive a simple expression for the transparency carrier density as a function of temperature and effective masses to explain our results.",

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doi = "10.1063/1.104775",

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T1 - Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)

AU - Eng, L. E.

AU - Sa'ar, A.

AU - Chen, T. R.

AU - Gravé, I.

AU - Kuze, N.

AU - Yariv, A.

PY - 1991

Y1 - 1991

N2 - The operation of ultralow threshold current GaAs and InGaAs quantum well lasers at cryogenic temperatures has been studied. In particular the threshold current Ith and lasing wavelength of GaAs and strained InGaAs lasers have been measured as a function of temperature from 300 down to 5 K. I th can in both lasers be characterized by a linear function of temperature up to 200 K, with a significantly (2.5×) larger dI th/dT for the GaAs laser. We measured a minimum threshold current of 120 μA for the GaAs laser and 165 μA for the InGaAs laser at 5 K. We derive a simple expression for the transparency carrier density as a function of temperature and effective masses to explain our results.

AB - The operation of ultralow threshold current GaAs and InGaAs quantum well lasers at cryogenic temperatures has been studied. In particular the threshold current Ith and lasing wavelength of GaAs and strained InGaAs lasers have been measured as a function of temperature from 300 down to 5 K. I th can in both lasers be characterized by a linear function of temperature up to 200 K, with a significantly (2.5×) larger dI th/dT for the GaAs laser. We measured a minimum threshold current of 120 μA for the GaAs laser and 165 μA for the InGaAs laser at 5 K. We derive a simple expression for the transparency carrier density as a function of temperature and effective masses to explain our results.

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Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)

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