TY - JOUR
T1 - Microscopic evidence for the modification of the electronic structure at grain boundaries of Cu(In 1-x,Ga x)Se 2 films
AU - Azulay, Doron
AU - Balberg, Isaac
AU - Millo, Oded
PY - 2012/2/14
Y1 - 2012/2/14
N2 - We investigated the electronic properties around grain boundaries of polycrystalline Cu(In 1-x,Ga xSe 2) films as a function of Ga content, using scanning tunneling spectroscopy. Spectra acquired on samples with low Ga content (x=0 and 0.33) reveal downward band bending with respect to adjacent p-type grains, suggesting type inversion at the surface of grain boundaries. Such a behavior was not observed for samples with high Ga contents. These results are consistent with our atomic force microscopy data and may shed light on the origin of the x-dependent efficiency for polycrystalline Cu(In 1-x,Ga xSe 2)-based solar cells.
AB - We investigated the electronic properties around grain boundaries of polycrystalline Cu(In 1-x,Ga xSe 2) films as a function of Ga content, using scanning tunneling spectroscopy. Spectra acquired on samples with low Ga content (x=0 and 0.33) reveal downward band bending with respect to adjacent p-type grains, suggesting type inversion at the surface of grain boundaries. Such a behavior was not observed for samples with high Ga contents. These results are consistent with our atomic force microscopy data and may shed light on the origin of the x-dependent efficiency for polycrystalline Cu(In 1-x,Ga xSe 2)-based solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84857250638&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.108.076603
DO - 10.1103/PhysRevLett.108.076603
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AN - SCOPUS:84857250638
SN - 0031-9007
VL - 108
JO - Physical Review Letters
JF - Physical Review Letters
IS - 7
M1 - 076603
ER -
