Microscopic evidence for the modification of the electronic structure at grain boundaries of Cu(In 1-x,Ga x)Se 2 films

Doron Azulay*, Isaac Balberg, Oded Millo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We investigated the electronic properties around grain boundaries of polycrystalline Cu(In 1-x,Ga xSe 2) films as a function of Ga content, using scanning tunneling spectroscopy. Spectra acquired on samples with low Ga content (x=0 and 0.33) reveal downward band bending with respect to adjacent p-type grains, suggesting type inversion at the surface of grain boundaries. Such a behavior was not observed for samples with high Ga contents. These results are consistent with our atomic force microscopy data and may shed light on the origin of the x-dependent efficiency for polycrystalline Cu(In 1-x,Ga xSe 2)-based solar cells.

Original languageAmerican English
Article number076603
JournalPhysical Review Letters
Volume108
Issue number7
DOIs
StatePublished - 14 Feb 2012

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