Microwave dielectric loss at single photon energies and millikelvin temperatures

Aaron D. O'Connell; M. Ansmann; R. C. Bialczak; M. Hofheinz; N. Katz; Erik Lucero; C. McKenney; M. Neeley; H. Wang; E. M. Weig; A. N. Cleland; J. M. Martinis

doi:10.1063/1.2898887

Microwave dielectric loss at single photon energies and millikelvin temperatures

Aaron D. O'Connell, M. Ansmann, R. C. Bialczak, M. Hofheinz, N. Katz, Erik Lucero, C. McKenney, M. Neeley, H. Wang, E. M. Weig, A. N. Cleland, J. M. Martinis

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215 Scopus citations

Abstract

The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline dielectrics, measured at low temperatures (T<100 mK) with near single-photon excitation energies, E ω0 ∼1, using both coplanar waveguide and lumped LC resonators. The loss can be understood using a two-level state defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is theoretically considered.

Original language	English
Article number	112903
Journal	Applied Physics Letters
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.2898887
State	Published - 2008
Externally published	Yes

Bibliographical note

Funding Information:
Devices were made at the UCSB and Cornell Nanofabrication Facilities, a part of the NSF-funded National Nanotechnology Infrastructure Network. This work was supported by ARDA under Grant No. W911NF-04-1-0204 and by the NSF under Grant No. CCF-0507227.

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title = "Microwave dielectric loss at single photon energies and millikelvin temperatures",

abstract = "The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline dielectrics, measured at low temperatures (T<100 mK) with near single-photon excitation energies, E ω0 ∼1, using both coplanar waveguide and lumped LC resonators. The loss can be understood using a two-level state defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is theoretically considered.",

author = "O'Connell, {Aaron D.} and M. Ansmann and Bialczak, {R. C.} and M. Hofheinz and N. Katz and Erik Lucero and C. McKenney and M. Neeley and H. Wang and Weig, {E. M.} and Cleland, {A. N.} and Martinis, {J. M.}",

note = "Funding Information: Devices were made at the UCSB and Cornell Nanofabrication Facilities, a part of the NSF-funded National Nanotechnology Infrastructure Network. This work was supported by ARDA under Grant No. W911NF-04-1-0204 and by the NSF under Grant No. CCF-0507227. ",

year = "2008",

doi = "10.1063/1.2898887",

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volume = "92",

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publisher = "American Institute of Physics",

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T1 - Microwave dielectric loss at single photon energies and millikelvin temperatures

AU - O'Connell, Aaron D.

AU - Ansmann, M.

AU - Bialczak, R. C.

AU - Hofheinz, M.

AU - Katz, N.

AU - Lucero, Erik

AU - McKenney, C.

AU - Neeley, M.

AU - Wang, H.

AU - Weig, E. M.

AU - Cleland, A. N.

AU - Martinis, J. M.

N1 - Funding Information: Devices were made at the UCSB and Cornell Nanofabrication Facilities, a part of the NSF-funded National Nanotechnology Infrastructure Network. This work was supported by ARDA under Grant No. W911NF-04-1-0204 and by the NSF under Grant No. CCF-0507227.

PY - 2008

Y1 - 2008

N2 - The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline dielectrics, measured at low temperatures (T<100 mK) with near single-photon excitation energies, E ω0 ∼1, using both coplanar waveguide and lumped LC resonators. The loss can be understood using a two-level state defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is theoretically considered.

AB - The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline dielectrics, measured at low temperatures (T<100 mK) with near single-photon excitation energies, E ω0 ∼1, using both coplanar waveguide and lumped LC resonators. The loss can be understood using a two-level state defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is theoretically considered.

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Microwave dielectric loss at single photon energies and millikelvin temperatures

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