TY - JOUR
T1 - Microwave-enhanced hopping conductivity
T2 - A non-Ohmic effect
AU - Ovadyahu, Z.
PY - 2011/10/21
Y1 - 2011/10/21
N2 - Hopping conductivity is enhanced when exposed to microwave fields. Data taken on a variety of Anderson-localized systems are presented to illustrate the generality of the phenomenon. Specific features of these results lead us to conjecture that the effect is due to a field-enhanced hopping, which is the high-frequency version of the non-Ohmic effect, well known in the dc transport regime. Experimental evidence in support of this scenario is presented and discussed. It is pointed out that existing models for non-Ohmic behavior in the hopping regime may, at best, offer a qualitative explanation to experiments. In particular, they cannot account for the extremely low values of the threshold fields that mark the onset of non-Ohmic behavior.
AB - Hopping conductivity is enhanced when exposed to microwave fields. Data taken on a variety of Anderson-localized systems are presented to illustrate the generality of the phenomenon. Specific features of these results lead us to conjecture that the effect is due to a field-enhanced hopping, which is the high-frequency version of the non-Ohmic effect, well known in the dc transport regime. Experimental evidence in support of this scenario is presented and discussed. It is pointed out that existing models for non-Ohmic behavior in the hopping regime may, at best, offer a qualitative explanation to experiments. In particular, they cannot account for the extremely low values of the threshold fields that mark the onset of non-Ohmic behavior.
UR - http://www.scopus.com/inward/record.url?scp=80455123683&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.84.165209
DO - 10.1103/PhysRevB.84.165209
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AN - SCOPUS:80455123683
SN - 1098-0121
VL - 84
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 16
M1 - 165209
ER -