Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Abderraouf Boucherif; Dayan Ban; Hui Luo; Emmanuel Dupont; H. C. Liu; Z. R. Wasilewski; Yossi Paltiel

doi:10.1109/QELS.2007.4431411

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Abderraouf Boucherif^*, Dayan Ban, Hui Luo, Emmanuel Dupont, H. C. Liu, Z. R. Wasilewski, Yossi Paltiel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

Original language	American English
Title of host publication	2007 Quantum Electronics and Laser Science Conference, QELS
DOIs	https://doi.org/10.1109/QELS.2007.4431411
State	Published - 2007
Externally published	Yes
Event	2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States Duration: 6 May 2007 → 11 May 2007

Publication series

Name	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Conference

Conference	2007 Quantum Electronics and Laser Science Conference, QELS
Country/Territory	United States
City	Baltimore, MD
Period	6/05/07 → 11/05/07

Access to Document

10.1109/QELS.2007.4431411

Cite this

Boucherif, A., Ban, D., Luo, H., Dupont, E., Liu, H. C., Wasilewski, Z. R., & Paltiel, Y. (2007). Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. In 2007 Quantum Electronics and Laser Science Conference, QELS Article 4431411 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2007.4431411

@inproceedings{37d7907aaefd4c6db5472e51688376bb,

title = "Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode",

abstract = "We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.",

author = "Abderraouf Boucherif and Dayan Ban and Hui Luo and Emmanuel Dupont and Liu, {H. C.} and Wasilewski, {Z. R.} and Yossi Paltiel",

year = "2007",

doi = "10.1109/QELS.2007.4431411",

language = "American English",

isbn = "1557528349",

series = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

booktitle = "2007 Quantum Electronics and Laser Science Conference, QELS",

note = "2007 Quantum Electronics and Laser Science Conference, QELS ; Conference date: 06-05-2007 Through 11-05-2007",

}

Boucherif, A, Ban, D, Luo, H, Dupont, E, Liu, HC, Wasilewski, ZR & Paltiel, Y 2007, Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. in 2007 Quantum Electronics and Laser Science Conference, QELS., 4431411, Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 2007 Quantum Electronics and Laser Science Conference, QELS, Baltimore, MD, United States, 6/05/07. https://doi.org/10.1109/QELS.2007.4431411

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. / Boucherif, Abderraouf; Ban, Dayan; Luo, Hui et al.
2007 Quantum Electronics and Laser Science Conference, QELS. 2007. 4431411 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

AU - Boucherif, Abderraouf

AU - Ban, Dayan

AU - Luo, Hui

AU - Dupont, Emmanuel

AU - Liu, H. C.

AU - Wasilewski, Z. R.

AU - Paltiel, Yossi

PY - 2007

Y1 - 2007

N2 - We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

AB - We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

UR - http://www.scopus.com/inward/record.url?scp=51549092774&partnerID=8YFLogxK

U2 - 10.1109/QELS.2007.4431411

DO - 10.1109/QELS.2007.4431411

M3 - Conference contribution

AN - SCOPUS:51549092774

SN - 1557528349

SN - 9781557528346

T3 - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

BT - 2007 Quantum Electronics and Laser Science Conference, QELS

T2 - 2007 Quantum Electronics and Laser Science Conference, QELS

Y2 - 6 May 2007 through 11 May 2007

ER -

Boucherif A, Ban D, Luo H, Dupont E, Liu HC, Wasilewski ZR et al. Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. In 2007 Quantum Electronics and Laser Science Conference, QELS. 2007. 4431411. (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). doi: 10.1109/QELS.2007.4431411

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

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