Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Abderraouf Boucherif; Dayan Ban; Hui Luo; Emmanuel Dupont; H. C. Liu; Z. R. Wasilewski; Yossi Paltiel

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Abderraouf Boucherif, Dayan Ban, Hui Luo, Emmanuel Dupont, H. C. Liu, Z. R. Wasilewski, Yossi Paltiel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

Original language	English
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2007
Publisher	Optical Society of America
ISBN (Print)	1557528349, 9781557528346
State	Published - 2007
Externally published	Yes
Event	Quantum Electronics and Laser Science Conference, QELS 2007 - Baltimore, MD, United States Duration: 6 May 2007 → 6 May 2007

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Quantum Electronics and Laser Science Conference, QELS 2007
Country/Territory	United States
City	Baltimore, MD
Period	6/05/07 → 6/05/07

Cite this

@inproceedings{2bc72970caf64a779bf50ea40c90c988,

title = "Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode",

abstract = "We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.",

author = "Abderraouf Boucherif and Dayan Ban and Hui Luo and Emmanuel Dupont and Liu, {H. C.} and Wasilewski, {Z. R.} and Yossi Paltiel",

year = "2007",

language = "אנגלית",

isbn = "1557528349",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2007",

note = "Quantum Electronics and Laser Science Conference, QELS 2007 ; Conference date: 06-05-2007 Through 06-05-2007",

}

Boucherif, A, Ban, D, Luo, H, Dupont, E, Liu, HC, Wasilewski, ZR & Paltiel, Y 2007, Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. in Quantum Electronics and Laser Science Conference, QELS 2007. Optics InfoBase Conference Papers, Optical Society of America, Quantum Electronics and Laser Science Conference, QELS 2007, Baltimore, MD, United States, 6/05/07.

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. / Boucherif, Abderraouf; Ban, Dayan; Luo, Hui et al.
Quantum Electronics and Laser Science Conference, QELS 2007. Optical Society of America, 2007. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

AU - Boucherif, Abderraouf

AU - Ban, Dayan

AU - Luo, Hui

AU - Dupont, Emmanuel

AU - Liu, H. C.

AU - Wasilewski, Z. R.

AU - Paltiel, Yossi

PY - 2007

Y1 - 2007

N2 - We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

AB - We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

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AN - SCOPUS:84899113453

SN - 1557528349

SN - 9781557528346

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2007

PB - Optical Society of America

T2 - Quantum Electronics and Laser Science Conference, QELS 2007

Y2 - 6 May 2007 through 6 May 2007

ER -

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

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