Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Abderraouf Boucherif*, Dayan Ban, Hui Luo, Emmanuel Dupont, H. C. Liu, Z. R. Wasilewski, Yossi Paltiel

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

Original languageAmerican English
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
StatePublished - 2007
Externally publishedYes
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: 6 May 200711 May 2007

Publication series

NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

Conference

ConferenceConference on Lasers and Electro-Optics, 2007, CLEO 2007
Country/TerritoryUnited States
CityBaltimore, MD
Period6/05/0711/05/07

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