Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Abderraouf Boucherif; Dayan Ban; Hui Luo; Emmanuel Dupont; H. C. Liu; Z. R. Wasilewski; Yossi Paltiel

doi:10.1109/CLEO.2007.4453634

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Abderraouf Boucherif^*, Dayan Ban, Hui Luo, Emmanuel Dupont, H. C. Liu, Z. R. Wasilewski, Yossi Paltiel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs	https://doi.org/10.1109/CLEO.2007.4453634
State	Published - 2007
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States Duration: 6 May 2007 → 11 May 2007

Publication series

Name	Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Conference

Conference	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
Country/Territory	United States
City	Baltimore, MD
Period	6/05/07 → 11/05/07

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10.1109/CLEO.2007.4453634

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Boucherif, A., Ban, D., Luo, H., Dupont, E., Liu, H. C., Wasilewski, Z. R., & Paltiel, Y. (2007). Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007 Article 4453634 (Conference on Lasers and Electro-Optics, 2007, CLEO 2007). https://doi.org/10.1109/CLEO.2007.4453634

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title = "Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode",

abstract = "We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.",

author = "Abderraouf Boucherif and Dayan Ban and Hui Luo and Emmanuel Dupont and Liu, {H. C.} and Wasilewski, {Z. R.} and Yossi Paltiel",

year = "2007",

doi = "10.1109/CLEO.2007.4453634",

language = "אנגלית",

isbn = "9781557528346",

series = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",

booktitle = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",

note = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007 ; Conference date: 06-05-2007 Through 11-05-2007",

}

Boucherif, A, Ban, D, Luo, H, Dupont, E, Liu, HC, Wasilewski, ZR & Paltiel, Y 2007, Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. in Conference on Lasers and Electro-Optics, 2007, CLEO 2007., 4453634, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Baltimore, MD, United States, 6/05/07. https://doi.org/10.1109/CLEO.2007.4453634

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode. / Boucherif, Abderraouf; Ban, Dayan; Luo, Hui et al.
Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007. 4453634 (Conference on Lasers and Electro-Optics, 2007, CLEO 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

AU - Boucherif, Abderraouf

AU - Ban, Dayan

AU - Luo, Hui

AU - Dupont, Emmanuel

AU - Liu, H. C.

AU - Wasilewski, Z. R.

AU - Paltiel, Yossi

PY - 2007

Y1 - 2007

N2 - We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

AB - We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 μm was demonstrated at temperatures up to 200 K.

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T3 - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

BT - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

T2 - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Y2 - 6 May 2007 through 11 May 2007

ER -

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

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