We have developed a midinfrared optical upconverter by wafer bonding a GaAsAlGaAs light-emitting diode with an InSb p+ n n+ photodetector. The device converts midinfrared radiation in the range of 3-5.45 μm to near-infrared light at 0.84 μm, which can be efficiently detected using a widely available Si charge coupled device. At 77 K, the measured external upconversion efficiency was 0.093 WW. The optical up-conversion device, in combination with the Si CCD camera, leads to an alternative solution for making low-cost and large-area midinfrared imaging device. Effects of electrical gain and photon recycling inside this integrated device are discussed.
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The authors thank E. Dupont, C.-Y. Song, M. Buchanan, A. Zemel, and A. Zussman for helpful discussions, and B. Bejerano, M. Mizrahy, G. Shtrum for technical assistance. The work at IMS was supported in part by DRDC-Valcartier of the Department of National Defence and the NRC GHI program.