Midinfrared optical upconverter

D. Ban; H. Luo; H. C. Liu; Z. R. Wasilewski; Y. Paltiel; A. Raizman; A. Sher

doi:10.1063/1.1921330

Midinfrared optical upconverter

D. Ban, H. Luo, H. C. Liu, Z. R. Wasilewski, Y. Paltiel, A. Raizman, A. Sher

Research output: Contribution to journal › Article › peer-review

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Abstract

We have developed a midinfrared optical upconverter by wafer bonding a GaAsAlGaAs light-emitting diode with an InSb p+ n n+ photodetector. The device converts midinfrared radiation in the range of 3-5.45 μm to near-infrared light at 0.84 μm, which can be efficiently detected using a widely available Si charge coupled device. At 77 K, the measured external upconversion efficiency was 0.093 WW. The optical up-conversion device, in combination with the Si CCD camera, leads to an alternative solution for making low-cost and large-area midinfrared imaging device. Effects of electrical gain and photon recycling inside this integrated device are discussed.

Original language	English
Article number	201103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1921330
State	Published - 16 May 2005
Externally published	Yes

Bibliographical note

Funding Information:
The authors thank E. Dupont, C.-Y. Song, M. Buchanan, A. Zemel, and A. Zussman for helpful discussions, and B. Bejerano, M. Mizrahy, G. Shtrum for technical assistance. The work at IMS was supported in part by DRDC-Valcartier of the Department of National Defence and the NRC GHI program.

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10.1063/1.1921330

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title = "Midinfrared optical upconverter",

abstract = "We have developed a midinfrared optical upconverter by wafer bonding a GaAsAlGaAs light-emitting diode with an InSb p+ n n+ photodetector. The device converts midinfrared radiation in the range of 3-5.45 μm to near-infrared light at 0.84 μm, which can be efficiently detected using a widely available Si charge coupled device. At 77 K, the measured external upconversion efficiency was 0.093 WW. The optical up-conversion device, in combination with the Si CCD camera, leads to an alternative solution for making low-cost and large-area midinfrared imaging device. Effects of electrical gain and photon recycling inside this integrated device are discussed.",

author = "D. Ban and H. Luo and Liu, {H. C.} and Wasilewski, {Z. R.} and Y. Paltiel and A. Raizman and A. Sher",

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doi = "10.1063/1.1921330",

language = "אנגלית",

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AU - Ban, D.

AU - Luo, H.

AU - Liu, H. C.

AU - Wasilewski, Z. R.

AU - Paltiel, Y.

AU - Raizman, A.

AU - Sher, A.

N1 - Funding Information: The authors thank E. Dupont, C.-Y. Song, M. Buchanan, A. Zemel, and A. Zussman for helpful discussions, and B. Bejerano, M. Mizrahy, G. Shtrum for technical assistance. The work at IMS was supported in part by DRDC-Valcartier of the Department of National Defence and the NRC GHI program.

PY - 2005/5/16

Y1 - 2005/5/16

N2 - We have developed a midinfrared optical upconverter by wafer bonding a GaAsAlGaAs light-emitting diode with an InSb p+ n n+ photodetector. The device converts midinfrared radiation in the range of 3-5.45 μm to near-infrared light at 0.84 μm, which can be efficiently detected using a widely available Si charge coupled device. At 77 K, the measured external upconversion efficiency was 0.093 WW. The optical up-conversion device, in combination with the Si CCD camera, leads to an alternative solution for making low-cost and large-area midinfrared imaging device. Effects of electrical gain and photon recycling inside this integrated device are discussed.

AB - We have developed a midinfrared optical upconverter by wafer bonding a GaAsAlGaAs light-emitting diode with an InSb p+ n n+ photodetector. The device converts midinfrared radiation in the range of 3-5.45 μm to near-infrared light at 0.84 μm, which can be efficiently detected using a widely available Si charge coupled device. At 77 K, the measured external upconversion efficiency was 0.093 WW. The optical up-conversion device, in combination with the Si CCD camera, leads to an alternative solution for making low-cost and large-area midinfrared imaging device. Effects of electrical gain and photon recycling inside this integrated device are discussed.

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Midinfrared optical upconverter

Abstract

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