Mission Profile-Driven Transistor Aging Modeling and Simulation Flow

The impact of transistor aging on reliability has become increasingly critical with the rising trends of miniaturization and thermal density in modern integrated circuits (ICs). Aging simulations during the design stage are essential for predicting degradation over an IC's lifetime. However, conventional aging simulations typically assume fixed, worst-case operating conditions, leading to overly conservative aging margins. In this paper, we introduce a new model and a simulation flow that incorporate variable operating temperatures, accurately reflecting the mission profile of ICs in the field. By capturing the dynamic nature of real-world operating environments, our proposed approach enables more precise aging predictions and potentially reduces overdesign, thereby improving design efficiency and lowering power consumption.