@inproceedings{6b70d66410714f74b1fb99042576c1e2,
title = "Mobility-lifetime products in glow discharge and rf sputter deposited a-Si:H",
abstract = "A comparative study of the deposition temperature (Ts) dependence of the mobility-lifetime (μτ) products of the charge carriers in glow-discharge and rf sputter-deposited a-Si:H is described and discussed. The Ts-dcpendence of the μτ's and the majority carrier light-intensity exponents of the two types of films are strikingly similar. These observations lead to the conclusion that the structure of the recombination levels as well as the recombination processes are in accord with the {"}defect pool{"} model, in contrast to previous suggestions. The differences between the two types of films thus appear to be limited to the differences in the concentrations of dangling bonds.",
author = "Farias, {M. H.} and A. Roche and Weisz, {S. Z.} and H. Jia and J. Shinar and Y. Lubianiker and I. Ba{\l}berg",
year = "1994",
doi = "10.1557/proc-336-425",
language = "אנגלית",
isbn = "1558992367",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "425--430",
booktitle = "Amorphous Silicon Technology - 1994",
address = "ארצות הברית",
note = "1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",
}