TY - GEN
T1 - Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation
AU - Antonova, Irina V.
AU - Gulyaev, Mitrofan B.
AU - Skuratov, Vladimir A.
AU - Marin, Denis V.
AU - Zaikina, Elvira V.
AU - Yanovitskaya, Zoya S.
AU - Goldstein, Yehuda
AU - Jedrzejewski, Jedzzey
PY - 2006
Y1 - 2006
N2 - The samples with layer of silicon nanocrystals ncSi embedded in SiO 2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.
AB - The samples with layer of silicon nanocrystals ncSi embedded in SiO 2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.
KW - Conductivity
KW - Excess si content
KW - High energy ion implantation
KW - Oxide matrix
KW - Silicon nanocrystals
UR - http://www.scopus.com/inward/record.url?scp=48649083669&partnerID=8YFLogxK
U2 - 10.1109/MEP.2006.335625
DO - 10.1109/MEP.2006.335625
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AN - SCOPUS:48649083669
SN - 1424406285
SN - 9781424406289
T3 - Multiconference on Electronics and Photonics, MEP 2006
SP - 53
EP - 56
BT - Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings
T2 - MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006
Y2 - 7 November 2006 through 10 November 2006
ER -