Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

Irina V. Antonova, Mitrofan B. Gulyaev, Vladimir A. Skuratov, Denis V. Marin, Elvira V. Zaikina, Zoya S. Yanovitskaya, Yehuda Goldstein, Jedzzey Jedrzejewski

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The samples with layer of silicon nanocrystals ncSi embedded in SiO 2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.

Original languageEnglish
Title of host publicationMulticonference on Electronics and Photonics, MEP 2006 - Embodied Meetings
Subtitle of host publicationCAOL 2006; POEO 2006; ISP 2006
Pages53-56
Number of pages4
DOIs
StatePublished - 2006
EventMEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006 - Guanajuato, Mexico
Duration: 7 Nov 200610 Nov 2006

Publication series

NameMulticonference on Electronics and Photonics, MEP 2006

Conference

ConferenceMEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006
Country/TerritoryMexico
CityGuanajuato
Period7/11/0610/11/06

Keywords

  • Conductivity
  • Excess si content
  • High energy ion implantation
  • Oxide matrix
  • Silicon nanocrystals

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