Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

Irina V. Antonova; Mitrofan B. Gulyaev; Vladimir A. Skuratov; Denis V. Marin; Elvira V. Zaikina; Zoya S. Yanovitskaya; Yehuda Goldstein; Jedzzey Jedrzejewski

doi:10.1109/MEP.2006.335625

Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

Irina V. Antonova
, Mitrofan B. Gulyaev
, Vladimir A. Skuratov
, Denis V. Marin
, Elvira V. Zaikina
, Zoya S. Yanovitskaya
, Yehuda Goldstein
, Jedzzey Jedrzejewski

Racah Institute of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The samples with layer of silicon nanocrystals ncSi embedded in SiO ₂ (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO₂-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.

Original language	English
Title of host publication	Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings
Subtitle of host publication	CAOL 2006; POEO 2006; ISP 2006
Pages	53-56
Number of pages	4
DOIs	https://doi.org/10.1109/MEP.2006.335625
State	Published - 2006
Event	MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006 - Guanajuato, Mexico Duration: 7 Nov 2006 → 10 Nov 2006

Publication series

Name	Multiconference on Electronics and Photonics, MEP 2006

Conference

Conference	MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006
Country/Territory	Mexico
City	Guanajuato
Period	7/11/06 → 10/11/06

Keywords

Conductivity
Excess si content
High energy ion implantation
Oxide matrix
Silicon nanocrystals

Access to Document

10.1109/MEP.2006.335625

Cite this

Antonova, I. V., Gulyaev, M. B., Skuratov, V. A., Marin, D. V., Zaikina, E. V., Yanovitskaya, Z. S., Goldstein, Y., & Jedrzejewski, J. (2006). Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation. In Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006 (pp. 53-56). Article 4135709 (Multiconference on Electronics and Photonics, MEP 2006). https://doi.org/10.1109/MEP.2006.335625

@inproceedings{1721b16a1bb749bbb07d48a79a6a05ba,

title = "Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation",

abstract = "The samples with layer of silicon nanocrystals ncSi embedded in SiO 2 (the excess Si content in oxide ranged from 5 to 92\%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.",

keywords = "Conductivity, Excess si content, High energy ion implantation, Oxide matrix, Silicon nanocrystals",

author = "Antonova, \{Irina V.\} and Gulyaev, \{Mitrofan B.\} and Skuratov, \{Vladimir A.\} and Marin, \{Denis V.\} and Zaikina, \{Elvira V.\} and Yanovitskaya, \{Zoya S.\} and Yehuda Goldstein and Jedzzey Jedrzejewski",

year = "2006",

doi = "10.1109/MEP.2006.335625",

language = "אנגלית",

isbn = "1424406285",

series = "Multiconference on Electronics and Photonics, MEP 2006",

pages = "53--56",

booktitle = "Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings",

note = "MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006 ; Conference date: 07-11-2006 Through 10-11-2006",

}

Antonova, IV, Gulyaev, MB, Skuratov, VA, Marin, DV, Zaikina, EV, Yanovitskaya, ZS, Goldstein, Y & Jedrzejewski, J 2006, Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation. in Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006., 4135709, Multiconference on Electronics and Photonics, MEP 2006, pp. 53-56, MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006, Guanajuato, Mexico, 7/11/06. https://doi.org/10.1109/MEP.2006.335625

Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation. / Antonova, Irina V.; Gulyaev, Mitrofan B.; Skuratov, Vladimir A. et al.
Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006. 2006. p. 53-56 4135709 (Multiconference on Electronics and Photonics, MEP 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

AU - Antonova, Irina V.

AU - Gulyaev, Mitrofan B.

AU - Skuratov, Vladimir A.

AU - Marin, Denis V.

AU - Zaikina, Elvira V.

AU - Yanovitskaya, Zoya S.

AU - Goldstein, Yehuda

AU - Jedrzejewski, Jedzzey

PY - 2006

Y1 - 2006

N2 - The samples with layer of silicon nanocrystals ncSi embedded in SiO 2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.

AB - The samples with layer of silicon nanocrystals ncSi embedded in SiO 2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.

KW - Conductivity

KW - Excess si content

KW - High energy ion implantation

KW - Oxide matrix

KW - Silicon nanocrystals

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T3 - Multiconference on Electronics and Photonics, MEP 2006

SP - 53

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BT - Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings

T2 - MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006

Y2 - 7 November 2006 through 10 November 2006

ER -

Antonova IV, Gulyaev MB, Skuratov VA, Marin DV, Zaikina EV, Yanovitskaya ZS et al. Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation. In Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006. 2006. p. 53-56. 4135709. (Multiconference on Electronics and Photonics, MEP 2006). doi: 10.1109/MEP.2006.335625

Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

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Keywords

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