Modification of silicon nanocrystals embedded in an oxide by high energy ion implantation

I. V. Antonova; M. B. Gulyaev; V. A. Skuratov; D. V. Marin; E. V. Zaikina; Z. S. Yanovitskaya; J. Jedrzejewski; I. Balberg

Modification of silicon nanocrystals embedded in an oxide by high energy ion implantation

I. V. Antonova^*, M. B. Gulyaev, V. A. Skuratov, D. V. Marin, E. V. Zaikina, Z. S. Yanovitskaya, J. Jedrzejewski, I. Balberg

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Samples with layer of silicon nanocrystals embedded in SiO₂ (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO₂-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.

Original language	English
Pages (from-to)	541-546
Number of pages	6
Journal	Solid State Phenomena
Volume	131-133
State	Published - 2008
Event	12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 - Erice, Italy Duration: 14 Oct 2007 → 19 Oct 2007

Keywords

Charge
Ion implantation
Photoluminescence
Si nanocrystals

Cite this

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title = "Modification of silicon nanocrystals embedded in an oxide by high energy ion implantation",

abstract = "Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.",

keywords = "Charge, Ion implantation, Photoluminescence, Si nanocrystals",

author = "Antonova, {I. V.} and Gulyaev, {M. B.} and Skuratov, {V. A.} and Marin, {D. V.} and Zaikina, {E. V.} and Yanovitskaya, {Z. S.} and J. Jedrzejewski and I. Balberg",

year = "2008",

language = "אנגלית",

volume = "131-133",

pages = "541--546",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Trans Tech Publications Ltd",

note = "12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 ; Conference date: 14-10-2007 Through 19-10-2007",

}

TY - JOUR

T1 - Modification of silicon nanocrystals embedded in an oxide by high energy ion implantation

AU - Antonova, I. V.

AU - Gulyaev, M. B.

AU - Skuratov, V. A.

AU - Marin, D. V.

AU - Zaikina, E. V.

AU - Yanovitskaya, Z. S.

AU - Jedrzejewski, J.

AU - Balberg, I.

PY - 2008

Y1 - 2008

N2 - Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.

AB - Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.

KW - Charge

KW - Ion implantation

KW - Photoluminescence

KW - Si nanocrystals

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AN - SCOPUS:38549098506

SN - 1012-0394

VL - 131-133

SP - 541

EP - 546

JO - Solid State Phenomena

JF - Solid State Phenomena

T2 - 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007

Y2 - 14 October 2007 through 19 October 2007

ER -

Modification of silicon nanocrystals embedded in an oxide by high energy ion implantation

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Keywords

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