Modifications of hopping transport due to electrostatically enhanced Coulomb repulsion

O. Entin-Wohlman; Z. Ovadyahu

doi:10.1103/PhysRevLett.56.643

Modifications of hopping transport due to electrostatically enhanced Coulomb repulsion

O. Entin-Wohlman^*
, Z. Ovadyahu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

It is demonstrated that the hopping conductivity of a strongly localized system may be significantly reduced by putting it in proximity with a metal. The experimental results on amorphous indium oxide films give evidence for the loss of screening in highly disordered conductors.

Original language	English
Pages (from-to)	643-646
Number of pages	4
Journal	Physical Review Letters
Volume	56
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.56.643
State	Published - 1986
Externally published	Yes

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10.1103/PhysRevLett.56.643

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title = "Modifications of hopping transport due to electrostatically enhanced Coulomb repulsion",

abstract = "It is demonstrated that the hopping conductivity of a strongly localized system may be significantly reduced by putting it in proximity with a metal. The experimental results on amorphous indium oxide films give evidence for the loss of screening in highly disordered conductors.",

author = "O. Entin-Wohlman and Z. Ovadyahu",

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Modifications of hopping transport due to electrostatically enhanced Coulomb repulsion

Abstract

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