Molecular dynamics simulations of void and helium bubble stability in amorphous silicon during heavy-ion bombardment

Maria A. Okunlewski*, Yinon Ashkenazy, Brent J. Heuser, Robert S. Averback

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Void and helium bubble stability in amorphous silicon during heavy-ion bombardment was investigated using molecular dynamics simulations. He bubbles with gas pressures equal to or greater than 0.1 kbar were found stable under isotropic 2 keV Xe bombardment at 10 K. The internal He pressure prevented the penetration of liquid Si into the open volume during the displacement cascade. It was found that the elongated morphology was very stable with respect to closure under Xe bombardment.

Original languageAmerican English
Pages (from-to)4181-4188
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number8
DOIs
StatePublished - 15 Oct 2004

Bibliographical note

Funding Information:
This work was supported by the Department of Energy, Nuclear Engineering Education Research (NEER) program under Grant No. DFG07-0l-ID14121 and in part by U.S. Department of Energy, Basic Energy Sciences under Grant No. DEFG02-91-ER45439. Computer simulations were carried out at the University of Illinois Materials Computation Center (MCC), a National Science Foundation Focus Research Group, under Grant No. NSF-DMR-9976550 and the National Center for Supercomputing Applications. The technical assistance of Greg Bauer, the MCC administrator, is greatly appreciated.

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