A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top surface of a silicon-on-insulator (SOI) wafer, are displaced from the mirrors and interact with these tilting elements via electrostatic fringing fields. In contrast to the more usual parallel-plate activation, the rotation angle saturates at high voltages. This paper discusses concept, design, and processing, and also compares modeling and measured performance of a specific 9° tilt range device array.
- Micromachined structures
- Optical telecommunications