Monolithic fringe-field-activated crystalline silicon tilting-mirror devices

Dennis S. Greywall*, Chien Shing Pai, Sang Hyun Oh, Chorng Ping Chang, Dan M. Marom, Paul A. Busch, Raymond A. Cirelli, J. Ashley Taylor, Fred P. Klemens, Thomas W. Sorsch, John Eric Bower, Warren Y.C. Lai, Hyongsok T. Soh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top surface of a silicon-on-insulator (SOI) wafer, are displaced from the mirrors and interact with these tilting elements via electrostatic fringing fields. In contrast to the more usual parallel-plate activation, the rotation angle saturates at high voltages. This paper discusses concept, design, and processing, and also compares modeling and measured performance of a specific 9° tilt range device array.

Original languageAmerican English
Pages (from-to)702-707
Number of pages6
JournalJournal of Microelectromechanical Systems
Issue number5
StatePublished - Oct 2003
Externally publishedYes


  • MEMS
  • Micromachined structures
  • Optical telecommunications


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