Abstract
A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top surface of a silicon-on-insulator (SOI) wafer, are displaced from the mirrors and interact with these tilting elements via electrostatic fringing fields. In contrast to the more usual parallel-plate activation, the rotation angle saturates at high voltages. This paper discusses concept, design, and processing, and also compares modeling and measured performance of a specific 9° tilt range device array.
| Original language | English |
|---|---|
| Pages (from-to) | 702-707 |
| Number of pages | 6 |
| Journal | Journal of Microelectromechanical Systems |
| Volume | 12 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 2003 |
| Externally published | Yes |
Keywords
- MEMS
- MOEMS
- Micromachined structures
- Optical telecommunications
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