Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

I. Gravé*, S. C. Kan, G. Griffel, S. W. Wu, A. Sa'ar, A. Yariv

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Original languageAmerican English
Pages (from-to)110-112
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number2
DOIs
StatePublished - 1991
Externally publishedYes

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