Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

I. Gravé; S. C. Kan; G. Griffel; S. W. Wu; A. Sa'ar; A. Yariv

doi:10.1063/1.104970

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

I. Gravé^*, S. C. Kan, G. Griffel, S. W. Wu, A. Sa'ar, A. Yariv

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Original language	English
Pages (from-to)	110-112
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	2
DOIs	https://doi.org/10.1063/1.104970
State	Published - 1991
Externally published	Yes

Access to Document

10.1063/1.104970

Cite this

@article{50ae20af3fe94aafbf5d62c48c5d6a16,

title = "Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser",

abstract = "A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.",

author = "I. Grav{\'e} and Kan, {S. C.} and G. Griffel and Wu, {S. W.} and A. Sa'ar and A. Yariv",

year = "1991",

doi = "10.1063/1.104970",

language = "אנגלית",

volume = "58",

pages = "110--112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

AU - Gravé, I.

AU - Kan, S. C.

AU - Griffel, G.

AU - Wu, S. W.

AU - Sa'ar, A.

AU - Yariv, A.

PY - 1991

Y1 - 1991

N2 - A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

AB - A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=30244498576&partnerID=8YFLogxK

U2 - 10.1063/1.104970

DO - 10.1063/1.104970

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:30244498576

SN - 0003-6951

VL - 58

SP - 110

EP - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

Abstract

Access to Document

Other files and links

Fingerprint

Cite this