Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layers

A. Brokman; R. Gat; Y. Alpern

doi:10.1063/1.97594

Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layers

A. Brokman^*, R. Gat, Y. Alpern

^*Corresponding author for this work

The Institute of Applied Physics

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Abstract

The microstructure of low pressure chemical vapor deposited silicon layers is investigated during and after annealing. The crystallization of deposited amorphous layers is controlled by microtwins, which are generated during the nucleation stage, and yields the final morphology of elongated grains. Recrystallization and growth of the deposited polycrystalline layers involve twin coarsening which causes the final morphology of regular equiaxed grains.

Original language	English
Pages (from-to)	382-384
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	7
DOIs	https://doi.org/10.1063/1.97594
State	Published - 1986

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title = "Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layers",

abstract = "The microstructure of low pressure chemical vapor deposited silicon layers is investigated during and after annealing. The crystallization of deposited amorphous layers is controlled by microtwins, which are generated during the nucleation stage, and yields the final morphology of elongated grains. Recrystallization and growth of the deposited polycrystalline layers involve twin coarsening which causes the final morphology of regular equiaxed grains.",

author = "A. Brokman and R. Gat and Y. Alpern",

year = "1986",

doi = "10.1063/1.97594",

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journal = "Applied Physics Letters",

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AU - Brokman, A.

AU - Gat, R.

AU - Alpern, Y.

PY - 1986

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N2 - The microstructure of low pressure chemical vapor deposited silicon layers is investigated during and after annealing. The crystallization of deposited amorphous layers is controlled by microtwins, which are generated during the nucleation stage, and yields the final morphology of elongated grains. Recrystallization and growth of the deposited polycrystalline layers involve twin coarsening which causes the final morphology of regular equiaxed grains.

AB - The microstructure of low pressure chemical vapor deposited silicon layers is investigated during and after annealing. The crystallization of deposited amorphous layers is controlled by microtwins, which are generated during the nucleation stage, and yields the final morphology of elongated grains. Recrystallization and growth of the deposited polycrystalline layers involve twin coarsening which causes the final morphology of regular equiaxed grains.

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JO - Applied Physics Letters

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Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layers

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