MoSe2/WS2 heterojunction photodiode integrated with a silicon nitride waveguide for near infrared light detection with high responsivity

Rivka Gherabli, S. R.K.C. Indukuri, Roy Zektzer, Christian Frydendahl, Uriel Levy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We demonstrate experimentally the realization and the characterization of a chip-scale integrated photodetector for the near-infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon nitride waveguide. This configuration achieves high responsivity of ~1 A W−1 at the wavelength of 780 nm (indicating an internal gain mechanism) while suppressing the dark current to the level of ~50 pA, much lower as compared to a reference sample of just MoSe2 without WS2. We have measured the power spectral density of the dark current to be as low as ~1 × 10−12 A Hz−0.5, from which we extract the noise equivalent power (NEP) to be ~1 × 10−12 W Hz−0.5. To demonstrate the usefulness of the device, we use it for the characterization of the transfer function of a microring resonator that is integrated on the same chip as the photodetector. The ability to integrate local photodetectors on a chip and to operate such devices with high performance at the near-infrared regime is expected to play a critical role in future integrated devices in the field of optical communications, quantum photonics, biochemical sensing, and more.

Original languageAmerican English
Article number60
JournalLight: Science and Applications
Volume12
Issue number1
DOIs
StatePublished - Dec 2023

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© 2023, The Author(s).

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