Abstract
Semiconductor CdS particles were formed in ZrO2 films, together with Eu3+ and Tb3+ ions. The steady-state, as well as the time-resolved luminescence, revealed that the intensity of emission of the REE is increased significantly in the presence of CdS particles. This phenomenon can be explained by energy transfer resulting from electron-hole recombination in the CdS to the REE. From the lifetime measurements, it is evident that this transfer occurs in the nanosecond scale.
Original language | English |
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Pages (from-to) | 154-156 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 45 |
Issue number | 3 |
DOIs | |
State | Published - Sep 2000 |