Nanoscale plasmonic memristor with optical readout functionality

Alexandros Emboras, Ilya Goykhman, Boris Desiatov, Noa Mazurski, Liron Stern, Joseph Shappir, Uriel Levy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

125 Scopus citations


We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

Original languageAmerican English
Pages (from-to)6151-6155
Number of pages5
JournalNano Letters
Issue number12
StatePublished - 11 Dec 2013


  • Local oxidation
  • memristor
  • resistive memories
  • silicon-photonics
  • surface-plasmons


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