Nature of photoluminescence excitation bands in porous silicon

T. V. Torchinskaya; N. E. Korsunskaya; M. K. Sheinkman; L. Yu Khomenkova; B. M. Bulakh; B. R. Dzhumaev; A. Many; Y. Goldstein; E. Savir

Nature of photoluminescence excitation bands in porous silicon

T. V. Torchinskaya^*, N. E. Korsunskaya, M. K. Sheinkman, L. Yu Khomenkova, B. M. Bulakh, B. R. Dzhumaev, A. Many, Y. Goldstein, E. Savir

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.

Original language	English
Pages	109-112
Number of pages	4
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 International Semiconductor Conference (CAS '99) - Sinaia, Romania Duration: 5 Oct 1999 → 9 Oct 1999

Conference

Conference	Proceedings of the 1999 International Semiconductor Conference (CAS '99)
City	Sinaia, Romania
Period	5/10/99 → 9/10/99

Cite this

@conference{8f4883e37e8346c9afe057429263ce03,

title = "Nature of photoluminescence excitation bands in porous silicon",

abstract = "Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.",

author = "Torchinskaya, {T. V.} and Korsunskaya, {N. E.} and Sheinkman, {M. K.} and Khomenkova, {L. Yu} and Bulakh, {B. M.} and Dzhumaev, {B. R.} and A. Many and Y. Goldstein and E. Savir",

year = "1999",

language = "אנגלית",

pages = "109--112",

note = "Proceedings of the 1999 International Semiconductor Conference (CAS '99) ; Conference date: 05-10-1999 Through 09-10-1999",

}

TY - CONF

T1 - Nature of photoluminescence excitation bands in porous silicon

AU - Torchinskaya, T. V.

AU - Korsunskaya, N. E.

AU - Sheinkman, M. K.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

AU - Dzhumaev, B. R.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

PY - 1999

Y1 - 1999

N2 - Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.

AB - Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.

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M3 - ???researchoutput.researchoutputtypes.contributiontoconference.paper???

AN - SCOPUS:0033324419

SP - 109

EP - 112

T2 - Proceedings of the 1999 International Semiconductor Conference (CAS '99)

Y2 - 5 October 1999 through 9 October 1999

ER -

Nature of photoluminescence excitation bands in porous silicon

Abstract

Conference

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