TY - JOUR
T1 - Nature of visible luminescence of co-sputtered Si-SiOx systems
AU - Torchynska, T.
AU - Becerril Espinoza, F. G.
AU - Goldstein, Y.
AU - Savir, E.
AU - Jedrzejewski, J.
AU - Khomenkova, L.
AU - Korsunska, N.
AU - Yukhimchuk, V.
PY - 2003/12/31
Y1 - 2003/12/31
N2 - Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.
AB - Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.
KW - Photoluminescence
KW - Quantum dots
UR - http://www.scopus.com/inward/record.url?scp=0347134642&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2003.09.235
DO - 10.1016/j.physb.2003.09.235
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AN - SCOPUS:0347134642
SN - 0921-4526
VL - 340-342
SP - 1119
EP - 1123
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)
Y2 - 28 July 2003 through 1 August 2003
ER -