Nature of visible luminescence of co-sputtered Si-SiOx systems

T. Torchynska*, F. G. Becerril Espinoza, Y. Goldstein, E. Savir, J. Jedrzejewski, L. Khomenkova, N. Korsunska, V. Yukhimchuk

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

Original languageEnglish
Pages (from-to)1119-1123
Number of pages5
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
StatePublished - 31 Dec 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: 28 Jul 20031 Aug 2003

Keywords

  • Photoluminescence
  • Quantum dots

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