Nature of visible luminescence of co-sputtered Si-SiOx systems

T. Torchynska; F. G. Becerril Espinoza; Y. Goldstein; E. Savir; J. Jedrzejewski; L. Khomenkova; N. Korsunska; V. Yukhimchuk

doi:10.1016/j.physb.2003.09.235

Nature of visible luminescence of co-sputtered Si-SiO_x systems

T. Torchynska^*
, F. G. Becerril Espinoza
, Y. Goldstein
, E. Savir
, J. Jedrzejewski
, L. Khomenkova
, N. Korsunska
, V. Yukhimchuk

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO _x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiO_x system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

Original language	English
Pages (from-to)	1119-1123
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.235
State	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

Keywords

Photoluminescence
Quantum dots

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10.1016/j.physb.2003.09.235

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title = "Nature of visible luminescence of co-sputtered Si-SiOx systems",

abstract = "Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.",

keywords = "Photoluminescence, Quantum dots",

author = "T. Torchynska and \{Becerril Espinoza\}, \{F. G.\} and Y. Goldstein and E. Savir and J. Jedrzejewski and L. Khomenkova and N. Korsunska and V. Yukhimchuk",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.235",

language = "אנגלית",

volume = "340-342",

pages = "1119--1123",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

}

TY - JOUR

T1 - Nature of visible luminescence of co-sputtered Si-SiOx systems

AU - Torchynska, T.

AU - Becerril Espinoza, F. G.

AU - Goldstein, Y.

AU - Savir, E.

AU - Jedrzejewski, J.

AU - Khomenkova, L.

AU - Korsunska, N.

AU - Yukhimchuk, V.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

AB - Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

KW - Photoluminescence

KW - Quantum dots

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DO - 10.1016/j.physb.2003.09.235

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SN - 0921-4526

VL - 340-342

SP - 1119

EP - 1123

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Nature of visible luminescence of co-sputtered Si-SiO_x systems

Abstract

Keywords

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