Near-field scanning optical microscopy studies of room temperature V-grooved quantum wire lasers

U. Ben-Ami; R. Nagar; N. Ben-Ami; A. Lewis; G. Eisenstein; M. Orenstein; E. Kapon; F. Reinhart; P. Ils; A. Gustafsson

Near-field scanning optical microscopy studies of room temperature V-grooved quantum wire lasers

U. Ben-Ami^*, R. Nagar, N. Ben-Ami, A. Lewis, G. Eisenstein, M. Orenstein, E. Kapon, F. Reinhart, P. Ils, A. Gustafsson

^*Corresponding author for this work

The Institute of Applied Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Room temperature GaAs/AlGaAs V-grooved quantum wire laser diodes grown by low pressure metallorganic chemical vapor deposition were studied by near-field scanning optical microscopy. High resolution measurements of light-current characteristics, emission spectra, and near-field intensity distributions of QWR diode lasers were obtained. In addition to the high resolution scans of the wire region, complete laser cross section were scanned and recorded the spatially resolved spectra at several drive currents. The emission measurements of the sloped areas as well as the top corners of the structure yielding important information on current and injected carrier leakage paths in complex devices.

Original language	English
Pages (from-to)	316-317
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	11
State	Published - 1997
Event	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: 18 May 1997 → 23 May 1997

Cite this

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title = "Near-field scanning optical microscopy studies of room temperature V-grooved quantum wire lasers",

abstract = "Room temperature GaAs/AlGaAs V-grooved quantum wire laser diodes grown by low pressure metallorganic chemical vapor deposition were studied by near-field scanning optical microscopy. High resolution measurements of light-current characteristics, emission spectra, and near-field intensity distributions of QWR diode lasers were obtained. In addition to the high resolution scans of the wire region, complete laser cross section were scanned and recorded the spatially resolved spectra at several drive currents. The emission measurements of the sloped areas as well as the top corners of the structure yielding important information on current and injected carrier leakage paths in complex devices.",

author = "U. Ben-Ami and R. Nagar and N. Ben-Ami and A. Lewis and G. Eisenstein and M. Orenstein and E. Kapon and F. Reinhart and P. Ils and A. Gustafsson",

year = "1997",

language = "אנגלית",

volume = "11",

pages = "316--317",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

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note = "Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 18-05-1997 Through 23-05-1997",

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TY - JOUR

T1 - Near-field scanning optical microscopy studies of room temperature V-grooved quantum wire lasers

AU - Ben-Ami, U.

AU - Nagar, R.

AU - Ben-Ami, N.

AU - Lewis, A.

AU - Eisenstein, G.

AU - Orenstein, M.

AU - Kapon, E.

AU - Reinhart, F.

AU - Ils, P.

AU - Gustafsson, A.

PY - 1997

Y1 - 1997

N2 - Room temperature GaAs/AlGaAs V-grooved quantum wire laser diodes grown by low pressure metallorganic chemical vapor deposition were studied by near-field scanning optical microscopy. High resolution measurements of light-current characteristics, emission spectra, and near-field intensity distributions of QWR diode lasers were obtained. In addition to the high resolution scans of the wire region, complete laser cross section were scanned and recorded the spatially resolved spectra at several drive currents. The emission measurements of the sloped areas as well as the top corners of the structure yielding important information on current and injected carrier leakage paths in complex devices.

AB - Room temperature GaAs/AlGaAs V-grooved quantum wire laser diodes grown by low pressure metallorganic chemical vapor deposition were studied by near-field scanning optical microscopy. High resolution measurements of light-current characteristics, emission spectra, and near-field intensity distributions of QWR diode lasers were obtained. In addition to the high resolution scans of the wire region, complete laser cross section were scanned and recorded the spatially resolved spectra at several drive currents. The emission measurements of the sloped areas as well as the top corners of the structure yielding important information on current and injected carrier leakage paths in complex devices.

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SN - 1092-8081

VL - 11

SP - 316

EP - 317

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO

Y2 - 18 May 1997 through 23 May 1997

ER -

Near-field scanning optical microscopy studies of room temperature V-grooved quantum wire lasers

Abstract

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