Negative magnetoresistance and magnetically controlled switching in fe3o4 single crystals

I. Balberg*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The negative magnetoresistance in Fe3O4 crystals at 77°K was found to saturate at about 9 kG and to increase with increasing electric field. The magnetoresistance data are explained in terms of spin disorder scattering. In the presence of a magnetic field the switching in this material can be advanced if voltage pulses are applied, and delayed if current pulses are applied. These findings are shown to be in quantitative agreement with the magnetoresistance data and the expectations from Joule self-heating.

Original languageEnglish
Pages (from-to)1294-1298
Number of pages5
JournalPhysical Review Letters
Volume25
Issue number18
DOIs
StatePublished - 1970
Externally publishedYes

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