Negative magnetoresistance in quantized accumulation layers on ZnO surfaces

Y. Goldstein*, Y. Grinshpan, A. Many

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Results are presented of magnetoresistance in quantized accumulation layers on the (0001) surface of ZnO. The measurements were performed at low temperatures T(2-80 K) and very high surface electron densities [(0.7-7) × 1013 cm-2]. The magnetoresistance was found to be negative over the entire studied range of magnetic induction B (up to 60 kG). Its absolute magnitude increases quadratically with BT at low values of BT and tends to saturation at high BT. A spin scattering model adapted to surface channels accounts very well for the experimental data. The main conclusion drawn is that scattering centers with giant magnetic moments (around 100 Bohr magnetons) must be present on the ZnO surface. Such giant moments may originate from ionic clusters in combination with the free electrons localized at and/or screening the charged clusters. A quantitative analysis of the data reveals also the presence of centers with much lower magnetic moments (around 10 Bohr magnetons).

Original languageEnglish
Pages (from-to)2256-2265
Number of pages10
JournalPhysical Review B
Volume19
Issue number4
DOIs
StatePublished - 1979

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