Negatively charged polaritons in a semiconductor microcavity

Ronen Rapaport, E. Cohen, Arza Ron, Evegeny Linder, L. N. Pfeiffer

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42 Scopus citations

Abstract

We study by reflection spectroscopy the cavity polaritons in a structure consisting of a single GaAs/AlAs quantum well that contains a low density (formula presented) two dimensional electron gas, and is embedded in a λ-wide (formula presented) microcavity (MC). For (formula presented) negatively charged MC polaritons are photoexcited, as a result of the strong coupling of the MC photon and the negatively charged (formula presented) exciton (formula presented) The charged polaritons have several properties that are distinct from those of neutral polaritons [which are formed from the neutral (formula presented) (X) and (formula presented) excitons] (a) The MC-photon–(formula presented) coupling strength increases as (formula presented) This is analogous to the dependence of the confined-photon–atom coupling on the density of free atoms in a metallic cavity. (b) The charged polaritons have a nonvanishing electric charge that is due to the bare (formula presented) charge. (c) Since the energy difference between the bare X and (formula presented) excitons is smaller than the coupling strength of each one with the MC photon, these two bare exciton states are admixed in the charged polariton states. The experimental reflection spectra were analyzed using a model of coupled quantum oscillators representing the excitons and the confined photon mode. From the fitted spectra it is deduced that the (formula presented) coupling strength increases with increasing (formula presented) and there is an oscillator strength transfer from X to (formula presented) Using the cavity polariton wave functions (which are obtained from the model fitting) we calculate the effective charge and mass of all the cavity polaritons as a function of the MC-photon energy. The calculated (formula presented) ratio reaches a value (formula presented) times larger than that of the free electron in a bare GaAs quantum well. Using the calculated dependence of the effective polariton charge and mass on the in-plane wave vector and the detuning energy, the maximum distance that the charged polariton can drift under an applied electric field is calculated. The charged polariton is expected to drift a distance at least 10 times larger than the bare (formula presented)

Original languageAmerican English
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number23
DOIs
StatePublished - 2001
Externally publishedYes

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