Abstract
We report a study of the critical behavior of the resistivity in n-type (In-doped) and p-type (Ag-doped) CdCr2Se4 single crystals. The results are analyzed in terms of the various proposed band models. We conclude that the valence band is a wide band with a small exchange interaction between the carrier and the localized spins. The conduction band is a narrow band, the broadening of which yields the enhancement of the mobility in the ferromagnetic region.
Original language | English |
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Pages (from-to) | 1920-1922 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 50 |
Issue number | B3 |
DOIs | |
State | Published - 1979 |
Externally published | Yes |