Abstract
We report a study of the critical behavior of the resistivity in n-type (In-doped) and p-type (Ag-doped) CdCr2Se4 single crystals. The results are analyzed in terms of the various proposed band models. We conclude that the valence band is a wide band with a small exchange interaction between the carrier and the localized spins. The conduction band is a narrow band, the broadening of which yields the enhancement of the mobility in the ferromagnetic region.
| Original language | English |
|---|---|
| Pages (from-to) | 1920-1922 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 50 |
| Issue number | B3 |
| DOIs | |
| State | Published - 1979 |
| Externally published | Yes |
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