Non-Gaussian dark current noise in p -type quantum-well infrared photodetectors

Y. Paltiel*, N. Snapi, A. Zussman, G. Jung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Bias-dependent non-Gaussian dark current noise has been observed in p -type quantum-well infrared photodetectors. Time domain analysis of the noise revealed two-level telegraphlike fluctuations with exponentially distributed lifetimes that change dramatically with changing bias. The nature of the non-Gaussian fluctuations at intermediate voltages is ascribed to switching between two electric-field distributions corresponding to distinct tunneling probabilities out of the quantum wells. The finite transition time between the levels is identified with the recharging time.

Original languageEnglish
Article number231103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
StatePublished - 2005
Externally publishedYes

Fingerprint

Dive into the research topics of 'Non-Gaussian dark current noise in p -type quantum-well infrared photodetectors'. Together they form a unique fingerprint.

Cite this