TY - JOUR
T1 - Nonlinear Band Gap Tunability in Selenium-Tellurium Alloys and Its Utilization in Solar Cells
AU - Hadar, Ido
AU - Hu, Xiaobing
AU - Luo, Zhong Zhen
AU - Dravid, Vinayak P.
AU - Kanatzidis, Mercouri G.
N1 - Publisher Copyright:
Copyright © 2019 American Chemical Society.
PY - 2019/9/13
Y1 - 2019/9/13
N2 - In this Letter, we report the alloying of the high-band-gap photovoltaic elemental absorber selenium with the isomorphic low-band-gap semiconductor tellurium to tune the band gap energy of Se1-xTex to the optimal value for photovoltaic absorber. Photovoltaic devices based on crystalline Se1-xTex alloys are promising candidates for extremely cheap and highly scalable solar cells, offering simple low-temperature fabrication and intrinsic stability. We explore the electro-optical properties of Se1-xTex alloys and show that the tellurium red shifts the band gap in a nonlinear manner, faster than expected, due to significantly nonlinear change of the conduction band energy, allowing them to easily reach the desired band gap of 1.2-1.4 eV. On the basis of these results, we rationally design and demonstrate the fabrication of simple Se1-xTex photovoltaic devices, showing significantly improved current density in comparison to pure selenium. Furthermore, we identify and analyze the main factors limiting the device efficiency and suggest a few approaches for future improvements of such photovoltaic devices.
AB - In this Letter, we report the alloying of the high-band-gap photovoltaic elemental absorber selenium with the isomorphic low-band-gap semiconductor tellurium to tune the band gap energy of Se1-xTex to the optimal value for photovoltaic absorber. Photovoltaic devices based on crystalline Se1-xTex alloys are promising candidates for extremely cheap and highly scalable solar cells, offering simple low-temperature fabrication and intrinsic stability. We explore the electro-optical properties of Se1-xTex alloys and show that the tellurium red shifts the band gap in a nonlinear manner, faster than expected, due to significantly nonlinear change of the conduction band energy, allowing them to easily reach the desired band gap of 1.2-1.4 eV. On the basis of these results, we rationally design and demonstrate the fabrication of simple Se1-xTex photovoltaic devices, showing significantly improved current density in comparison to pure selenium. Furthermore, we identify and analyze the main factors limiting the device efficiency and suggest a few approaches for future improvements of such photovoltaic devices.
UR - http://www.scopus.com/inward/record.url?scp=85071669780&partnerID=8YFLogxK
U2 - 10.1021/acsenergylett.9b01619
DO - 10.1021/acsenergylett.9b01619
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AN - SCOPUS:85071669780
SN - 2380-8195
VL - 4
SP - 2137
EP - 2143
JO - ACS Energy Letters
JF - ACS Energy Letters
IS - 9
ER -