Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions

Y. Huang*, S. Aharon, A. Gheno, S. Vedraine, L. Pedesseau, J. P. Burin, O. Durand, J. Boucle, L. Etgar, J. Even, A. Rolland

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Hole transport material (HTM) free and WOx based perovskite solar cells are theoretically investigated by using driftdiffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.

Original languageAmerican English
Title of host publication17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
EditorsMorten Willatzen, Joachim Piprek
PublisherIEEE Computer Society
Pages29-30
Number of pages2
ISBN (Electronic)9781509053230
DOIs
StatePublished - 11 Aug 2017
Event17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark
Duration: 24 Jul 201728 Jul 2017

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
ISSN (Print)2158-3234

Conference

Conference17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Country/TerritoryDenmark
CityCopenhagen
Period24/07/1728/07/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Fingerprint

Dive into the research topics of 'Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions'. Together they form a unique fingerprint.

Cite this