Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions

Y. Huang; S. Aharon; A. Gheno; S. Vedraine; L. Pedesseau; J. P. Burin; O. Durand; J. Boucle; L. Etgar; J. Even; A. Rolland

doi:10.1109/NUSOD.2017.8009975

Numerical simulation of HTM-free and WO_x based perovskite cells: Effects of interface conditions

Y. Huang^*
, S. Aharon
, A. Gheno
, S. Vedraine
, L. Pedesseau
, J. P. Burin
, O. Durand
, J. Boucle
, L. Etgar
, J. Even
, A. Rolland

^*Corresponding author for this work

Institute of Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Hole transport material (HTM) free and WO_x based perovskite solar cells are theoretically investigated by using driftdiffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.

Original language	English
Title of host publication	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Editors	Morten Willatzen, Joachim Piprek
Publisher	IEEE Computer Society
Pages	29-30
Number of pages	2
ISBN (Electronic)	9781509053230
DOIs	https://doi.org/10.1109/NUSOD.2017.8009975
State	Published - 11 Aug 2017
Event	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark Duration: 24 Jul 2017 → 28 Jul 2017

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
ISSN (Print)	2158-3234

Conference

Conference	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Country/Territory	Denmark
City	Copenhagen
Period	24/07/17 → 28/07/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/NUSOD.2017.8009975

Cite this

Huang, Y., Aharon, S., Gheno, A., Vedraine, S., Pedesseau, L., Burin, J. P., Durand, O., Boucle, J., Etgar, L., Even, J., & Rolland, A. (2017). Numerical simulation of HTM-free and WO_x based perovskite cells: Effects of interface conditions. In M. Willatzen, & J. Piprek (Eds.), 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 (pp. 29-30). Article 8009975 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). IEEE Computer Society. https://doi.org/10.1109/NUSOD.2017.8009975

Huang, Y. ; Aharon, S. ; Gheno, A. et al. / Numerical simulation of HTM-free and WO_x based perovskite cells : Effects of interface conditions. 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. editor / Morten Willatzen ; Joachim Piprek. IEEE Computer Society, 2017. pp. 29-30 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

@inproceedings{612e4bd7f13b4db785fa061b7e0a6ffc,

title = "Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions",

abstract = "Hole transport material (HTM) free and WOx based perovskite solar cells are theoretically investigated by using driftdiffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.",

author = "Y. Huang and S. Aharon and A. Gheno and S. Vedraine and L. Pedesseau and Burin, \{J. P.\} and O. Durand and J. Boucle and L. Etgar and J. Even and A. Rolland",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 ; Conference date: 24-07-2017 Through 28-07-2017",

year = "2017",

month = aug,

day = "11",

doi = "10.1109/NUSOD.2017.8009975",

language = "אנגלית",

series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

publisher = "IEEE Computer Society",

pages = "29--30",

editor = "Morten Willatzen and Joachim Piprek",

booktitle = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017",

address = "ארצות הברית",

}

Huang, Y, Aharon, S, Gheno, A, Vedraine, S, Pedesseau, L, Burin, JP, Durand, O, Boucle, J, Etgar, L, Even, J & Rolland, A 2017, Numerical simulation of HTM-free and WO_x based perovskite cells: Effects of interface conditions. in M Willatzen & J Piprek (eds), 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017., 8009975, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD, IEEE Computer Society, pp. 29-30, 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, Copenhagen, Denmark, 24/07/17. https://doi.org/10.1109/NUSOD.2017.8009975

Numerical simulation of HTM-free and WO_x based perovskite cells: Effects of interface conditions. / Huang, Y.; Aharon, S.; Gheno, A. et al.
17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. ed. / Morten Willatzen; Joachim Piprek. IEEE Computer Society, 2017. p. 29-30 8009975 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Numerical simulation of HTM-free and WOx based perovskite cells

T2 - 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017

AU - Huang, Y.

AU - Aharon, S.

AU - Gheno, A.

AU - Vedraine, S.

AU - Pedesseau, L.

AU - Burin, J. P.

AU - Durand, O.

AU - Boucle, J.

AU - Etgar, L.

AU - Even, J.

AU - Rolland, A.

PY - 2017/8/11

Y1 - 2017/8/11

N2 - Hole transport material (HTM) free and WOx based perovskite solar cells are theoretically investigated by using driftdiffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.

AB - Hole transport material (HTM) free and WOx based perovskite solar cells are theoretically investigated by using driftdiffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.

UR - https://www.scopus.com/pages/publications/85028612162

U2 - 10.1109/NUSOD.2017.8009975

DO - 10.1109/NUSOD.2017.8009975

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:85028612162

T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

SP - 29

EP - 30

BT - 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017

A2 - Willatzen, Morten

A2 - Piprek, Joachim

PB - IEEE Computer Society

Y2 - 24 July 2017 through 28 July 2017

ER -

Huang Y, Aharon S, Gheno A, Vedraine S, Pedesseau L, Burin JP et al. Numerical simulation of HTM-free and WO_x based perovskite cells: Effects of interface conditions. In Willatzen M, Piprek J, editors, 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. IEEE Computer Society. 2017. p. 29-30. 8009975. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). doi: 10.1109/NUSOD.2017.8009975