Abstract
While well known to occur in the de conductivity via extended states in disordered semiconductors, there is yet no convincing report of the Meyer-Neldel rule (MNR) for hopping conduction. In this paper we report such an observation in porous silicon (PS). We attribute this behavior to the temperature induced statistical shift of both, the Fermi level and the transport energy in the valence band tail.
| Original language | English |
|---|---|
| Pages (from-to) | 119-124 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (B): Basic Research |
| Volume | 205 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1998 |
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