OH-related emitting centers in interface layer of porous silicon

T. V. Torchynska; M. K. Sheinkman; N. E. Korsunskaya; L. Yu Khomenkovan; B. M. Bulakh; B. R. Dzhumaev; A. Many; Y. Goldstein; E. Savir

doi:10.1016/S0921-4526(99)00563-3

OH-related emitting centers in interface layer of porous silicon

T. V. Torchynska^*, M. K. Sheinkman, N. E. Korsunskaya, L. Yu Khomenkovan, B. M. Bulakh, B. R. Dzhumaev, A. Many, Y. Goldstein, E. Savir

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

33 Scopus citations

Abstract

Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.

Original language	English
Pages (from-to)	955-958
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00563-3
State	Published - 15 Dec 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 26 Jul 1999 → 30 Jul 1999

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title = "OH-related emitting centers in interface layer of porous silicon",

abstract = "Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.",

author = "Torchynska, {T. V.} and Sheinkman, {M. K.} and Korsunskaya, {N. E.} and Khomenkovan, {L. Yu} and Bulakh, {B. M.} and Dzhumaev, {B. R.} and A. Many and Y. Goldstein and E. Savir",

year = "1999",

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doi = "10.1016/S0921-4526(99)00563-3",

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journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - OH-related emitting centers in interface layer of porous silicon

AU - Torchynska, T. V.

AU - Sheinkman, M. K.

AU - Korsunskaya, N. E.

AU - Khomenkovan, L. Yu

AU - Bulakh, B. M.

AU - Dzhumaev, B. R.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.

AB - Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.

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SN - 0921-4526

VL - 273-274

SP - 955

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

OH-related emitting centers in interface layer of porous silicon

Abstract

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