Oligofuran-containing molecules for organic electronics

Ori Gidron; Afshin Dadvand; Emily Wei-Hsin Sun; Insik Chung; Linda J.W. Shimon; Michael Bendikov; Dmitrii F. Perepichka

doi:10.1039/c3tc00079f

Oligofuran-containing molecules for organic electronics

Ori Gidron, Afshin Dadvand, Emily Wei-Hsin Sun, Insik Chung, Linda J.W. Shimon, Michael Bendikov^*, Dmitrii F. Perepichka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

We describe the synthesis, characterization and field effect transistor (FET) properties of a series of furan-based conjugated oligomers such as unsubstituted, hexyl- and styryl-capped linear oligofurans and oligofuran-substituted anthracene derivatives. All studied oligofurans show high fluorescence and good thermal stability. Top contact organic FETs (OFETs) fabricated with oligofurans as the active layer show hole mobilities (∼0.01 to 0.07 cm² V^-1 s^-1) and on/off ratios (10 ⁴ to 10⁶) on a par with the corresponding oligothiophene analogues, while the threshold voltages displayed by oligofuran-based OFETs are significantly reduced due to higher HOMO energies as compared to those of oligothiophenes. Electroluminescence observed in oligofuran-based OFETs in a bottom-contact geometry is limited by electron injection. Overall, we find that furan building blocks are excellent candidates for replacing thiophene in optoelectronic materials.

Original language	English
Pages (from-to)	4358-4367
Number of pages	10
Journal	Journal of Materials Chemistry C
Volume	1
Issue number	28
DOIs	https://doi.org/10.1039/c3tc00079f
State	Published - 28 Jul 2013
Externally published	Yes

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title = "Oligofuran-containing molecules for organic electronics",

abstract = "We describe the synthesis, characterization and field effect transistor (FET) properties of a series of furan-based conjugated oligomers such as unsubstituted, hexyl- and styryl-capped linear oligofurans and oligofuran-substituted anthracene derivatives. All studied oligofurans show high fluorescence and good thermal stability. Top contact organic FETs (OFETs) fabricated with oligofurans as the active layer show hole mobilities (∼0.01 to 0.07 cm2 V-1 s-1) and on/off ratios (10 4 to 106) on a par with the corresponding oligothiophene analogues, while the threshold voltages displayed by oligofuran-based OFETs are significantly reduced due to higher HOMO energies as compared to those of oligothiophenes. Electroluminescence observed in oligofuran-based OFETs in a bottom-contact geometry is limited by electron injection. Overall, we find that furan building blocks are excellent candidates for replacing thiophene in optoelectronic materials.",

author = "Ori Gidron and Afshin Dadvand and {Wei-Hsin Sun}, Emily and Insik Chung and Shimon, {Linda J.W.} and Michael Bendikov and Perepichka, {Dmitrii F.}",

year = "2013",

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day = "28",

doi = "10.1039/c3tc00079f",

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AU - Gidron, Ori

AU - Dadvand, Afshin

AU - Wei-Hsin Sun, Emily

AU - Chung, Insik

AU - Shimon, Linda J.W.

AU - Bendikov, Michael

AU - Perepichka, Dmitrii F.

PY - 2013/7/28

Y1 - 2013/7/28

N2 - We describe the synthesis, characterization and field effect transistor (FET) properties of a series of furan-based conjugated oligomers such as unsubstituted, hexyl- and styryl-capped linear oligofurans and oligofuran-substituted anthracene derivatives. All studied oligofurans show high fluorescence and good thermal stability. Top contact organic FETs (OFETs) fabricated with oligofurans as the active layer show hole mobilities (∼0.01 to 0.07 cm2 V-1 s-1) and on/off ratios (10 4 to 106) on a par with the corresponding oligothiophene analogues, while the threshold voltages displayed by oligofuran-based OFETs are significantly reduced due to higher HOMO energies as compared to those of oligothiophenes. Electroluminescence observed in oligofuran-based OFETs in a bottom-contact geometry is limited by electron injection. Overall, we find that furan building blocks are excellent candidates for replacing thiophene in optoelectronic materials.

AB - We describe the synthesis, characterization and field effect transistor (FET) properties of a series of furan-based conjugated oligomers such as unsubstituted, hexyl- and styryl-capped linear oligofurans and oligofuran-substituted anthracene derivatives. All studied oligofurans show high fluorescence and good thermal stability. Top contact organic FETs (OFETs) fabricated with oligofurans as the active layer show hole mobilities (∼0.01 to 0.07 cm2 V-1 s-1) and on/off ratios (10 4 to 106) on a par with the corresponding oligothiophene analogues, while the threshold voltages displayed by oligofuran-based OFETs are significantly reduced due to higher HOMO energies as compared to those of oligothiophenes. Electroluminescence observed in oligofuran-based OFETs in a bottom-contact geometry is limited by electron injection. Overall, we find that furan building blocks are excellent candidates for replacing thiophene in optoelectronic materials.

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JO - Journal of Materials Chemistry C

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ER -

Oligofuran-containing molecules for organic electronics

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