On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman, Ugo Sassi, Boris Desiatov, Noa Mazurski, Silvia Milana, Domenico De Fazio, Anna Eiden, Jacob Khurgin, Joseph Shappir, Uriel Levy, Andrea C. Ferrari*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

261 Scopus citations

Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Original languageAmerican English
Pages (from-to)3005-3013
Number of pages9
JournalNano Letters
Volume16
Issue number5
DOIs
StatePublished - 11 May 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

Keywords

  • Graphene
  • avalanche multiplication
  • photodetectors
  • silicon photonics

Fingerprint

Dive into the research topics of 'On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain'. Together they form a unique fingerprint.

Cite this