On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman; Ugo Sassi; Boris Desiatov; Noa Mazurski; Silvia Milana; Domenico De Fazio; Anna Eiden; Jacob Khurgin; Joseph Shappir; Uriel Levy; Andrea C. Ferrari

doi:10.1021/acs.nanolett.5b05216

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman, Ugo Sassi, Boris Desiatov, Noa Mazurski, Silvia Milana, Domenico De Fazio, Anna Eiden, Jacob Khurgin, Joseph Shappir, Uriel Levy, Andrea C. Ferrari^*

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › peer-review

268 Scopus citations

Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Original language	English
Pages (from-to)	3005-3013
Number of pages	9
Journal	Nano Letters
Volume	16
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.5b05216
State	Published - 11 May 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

Keywords

Graphene
avalanche multiplication
photodetectors
silicon photonics

Access to Document

10.1021/acs.nanolett.5b05216

Cite this

@article{0acd1dd5e3a0420ba97e8132766d4777,

title = "On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain",

abstract = "We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.",

keywords = "Graphene, avalanche multiplication, photodetectors, silicon photonics",

author = "Ilya Goykhman and Ugo Sassi and Boris Desiatov and Noa Mazurski and Silvia Milana and {De Fazio}, Domenico and Anna Eiden and Jacob Khurgin and Joseph Shappir and Uriel Levy and Ferrari, {Andrea C.}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = may,

day = "11",

doi = "10.1021/acs.nanolett.5b05216",

language = "אנגלית",

volume = "16",

pages = "3005--3013",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

AU - Goykhman, Ilya

AU - Sassi, Ugo

AU - Desiatov, Boris

AU - Mazurski, Noa

AU - Milana, Silvia

AU - De Fazio, Domenico

AU - Eiden, Anna

AU - Khurgin, Jacob

AU - Shappir, Joseph

AU - Levy, Uriel

AU - Ferrari, Andrea C.

PY - 2016/5/11

Y1 - 2016/5/11

N2 - We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

AB - We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

KW - Graphene

KW - avalanche multiplication

KW - photodetectors

KW - silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=84974829776&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b05216

DO - 10.1021/acs.nanolett.5b05216

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84974829776

SN - 1530-6984

VL - 16

SP - 3005

EP - 3013

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this