On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman; Ugo Sassi; Boris Desiatov; Noa Mazurski; Silvia Milana; Domenico De Fazio; Anna Eiden; Jacob Khurgin; Joseph Shappir; Uriel Levy; Andrea C. Ferrari

doi:10.1021/acs.nanolett.5b05216

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman
, Ugo Sassi
, Boris Desiatov
, Noa Mazurski
, Silvia Milana
, Domenico De Fazio
, Anna Eiden
, Jacob Khurgin
, Joseph Shappir
, Uriel Levy
, Andrea C. Ferrari^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

302 Scopus citations

Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Original language	English
Pages (from-to)	3005-3013
Number of pages	9
Journal	Nano Letters
Volume	16
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.5b05216
State	Published - 11 May 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

Keywords

Graphene
avalanche multiplication
photodetectors
silicon photonics

Access to Document

10.1021/acs.nanolett.5b05216

Cite this

@article{0acd1dd5e3a0420ba97e8132766d4777,

title = "On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain",

abstract = "We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7\% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.",

keywords = "Graphene, avalanche multiplication, photodetectors, silicon photonics",

author = "Ilya Goykhman and Ugo Sassi and Boris Desiatov and Noa Mazurski and Silvia Milana and \{De Fazio\}, Domenico and Anna Eiden and Jacob Khurgin and Joseph Shappir and Uriel Levy and Ferrari, \{Andrea C.\}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = may,

day = "11",

doi = "10.1021/acs.nanolett.5b05216",

language = "אנגלית",

volume = "16",

pages = "3005--3013",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

AU - Goykhman, Ilya

AU - Sassi, Ugo

AU - Desiatov, Boris

AU - Mazurski, Noa

AU - Milana, Silvia

AU - De Fazio, Domenico

AU - Eiden, Anna

AU - Khurgin, Jacob

AU - Shappir, Joseph

AU - Levy, Uriel

AU - Ferrari, Andrea C.

PY - 2016/5/11

Y1 - 2016/5/11

N2 - We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

AB - We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

KW - Graphene

KW - avalanche multiplication

KW - photodetectors

KW - silicon photonics

UR - https://www.scopus.com/pages/publications/84974829776

U2 - 10.1021/acs.nanolett.5b05216

DO - 10.1021/acs.nanolett.5b05216

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84974829776

SN - 1530-6984

VL - 16

SP - 3005

EP - 3013

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this