On the absence of detectable carrier multiplication in a transient absorption study of InAs/CdSe/ZnSe core/shelm/shell2 quantum dots

Meirav Ben-Lulu; David Mocatta; Mischa Bonn; Uri Banin; Sanford Ruhman

doi:10.1021/nl080199u

On the absence of detectable carrier multiplication in a transient absorption study of InAs/CdSe/ZnSe core/shelm/shell2 quantum dots

Meirav Ben-Lulu, David Mocatta, Mischa Bonn, Uri Banin, Sanford Ruhman^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

160 Scopus citations

Abstract

Tunable femtosecond pump-near IR probe measurements on InAs/CdSe/ZnSe core/shell1/shell2 nanocrystal quantum dots were conducted to quantify spontaneous carrier multiplication previously reported in this system. Experimental conditions were chosen to eliminate the need for determining absolute wavelength dependent cross sections of the nanocrystals and allow direct comparison of band edge absorption bleach kinetics for different excitation energies up to 3.7 times the band gap. Results for two sample sees show no signs of carrier multiplication within that range. This result Is discussed in light of reports describing occurrence of this novel phenomenon In quantum dots based on this as well as numerous other semiconductor materials.

Original language	English
Pages (from-to)	1207-1211
Number of pages	5
Journal	Nano Letters
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/nl080199u
State	Published - Apr 2008

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abstract = "Tunable femtosecond pump-near IR probe measurements on InAs/CdSe/ZnSe core/shell1/shell2 nanocrystal quantum dots were conducted to quantify spontaneous carrier multiplication previously reported in this system. Experimental conditions were chosen to eliminate the need for determining absolute wavelength dependent cross sections of the nanocrystals and allow direct comparison of band edge absorption bleach kinetics for different excitation energies up to 3.7 times the band gap. Results for two sample sees show no signs of carrier multiplication within that range. This result Is discussed in light of reports describing occurrence of this novel phenomenon In quantum dots based on this as well as numerous other semiconductor materials.",

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AU - Ruhman, Sanford

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On the absence of detectable carrier multiplication in a transient absorption study of InAs/CdSe/ZnSe core/shelm/shell2 quantum dots

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