On the phase-breaking time of electrons in a disordered two-dimensional system

Measurements of the inelastic mean free path in two-dimensional indium oxide films are reported. The results suggest that the phase-breaking time in this material varies as T^-1, which agrees with the dependence predicted by several theoretically known scattering mechanisms. On the other hand, the actual values of the inelastic mean free path, at the same temperature, seem to be essentially independent of the films bulk resistivity. This latter feature may suggest the existence of a phase-breaking mechanism characterised by a scattering time that is proportional to the resistivity.